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APT20M36BLL APT20M36SLL
200V 65A 0.036
BLL D3PAK
TO-247
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT20M36BLL_SLL UNIT Volts Amps
200 65 260 30 40 329 2.63 -55 to 150 300 65 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.036 100 500 100 3 5
(VGS = 10V, ID = 32.5A)
Ohms A nA Volts
7-2004 050-7007 Rev C
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M36BLL_SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 65A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 65A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 133V, VGS = 15V ID = 65A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 133V VGS = 15V ID = 65A, RG = 5 RG = 1.6
MIN
TYP
MAX
UNIT pF
3080 990 70 60 24 26 9 37 16 30 490 300 600 315
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
65 260 1.3 280 3.5 5
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -65A)
Reverse Recovery Time (IS = -65A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -65A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ 6 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.38 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 0.62mH, RG = 25, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID65A di/dt 700A/s VR 200V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.40
, THERMAL IMPEDANCE (C/W)
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5
7-2004
Note:
PDM t1 t2
0.3
050-7007 Rev C
JC
0.1 0.05 10-4
Z
SINGLE PULSE
Peak TJ = PDM x ZJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
200
Junction temp. (C)
APT20M36BLL_SLL
VGS=15V 10V
ID, DRAIN CURRENT (AMPERES)
RC MODEL
160
0.0329
0.00334F
120
9V
Power (watts)
0.158
0.00802F
80
8V 7.5V
0.189 Case temperature. (C)
0.165F
40
7V 6.5V 6V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V NORMALIZED TO = 10V @ I = 32.5A
D
0
140
ID, DRAIN CURRENT (AMPERES)
120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
GS
1.3 1.2 1.1 1.0 0.9 0.8 VGS=10V
TJ = +25C TJ = +125C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VGS=20V 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
70 60 50 40 30 20 10 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
25
0.90
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
2.5
I
D
1.2
= 32.5A = 10V V
GS
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.1 1.0 0.9 0.8 0.7 0.6
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-7007 Rev C
7-2004
260 100
OPERATION HERE LIMITED BY RDS (ON)
10,000 5,000
APT20M36BLL_SLL
Ciss
ID, DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
50 100S
1,000 500
Coss
10 1mS 5 TC =+25C TJ =+150C SINGLE PULSE 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
100 50
Crss
10mS
1
1
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
14 12 10 8 6 4 2 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 45 40 35 td(off) 0 0 VDS=40V VDS=100V VDS=160V
IDR, REVERSE DRAIN CURRENT (AMPERES)
I
= 65A
10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C TJ =+25C
10
0
10 5
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120
V
DD G
= 133V
R
= 5
100 80
tr and tf (ns)
T = 125C
J
L = 100H V
DD G
td(on) and td(off) (ns)
30 25 20 15 10 5 0 30
= 133V
R
= 5
T = 125C
J
L = 100H
60 40 20 0 30
tf tr
td(on)
60 70 80 90 100 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
40
50
60 70 80 90 100 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000
40
50
1200
= 133V R = 5
1000
SWITCHING ENERGY (J)
T = 125C L = 100H
SWITCHING ENERGY (J)
J
800 Eon 600 Eoff 400
V I
DD
800 600 400 200 0 30
E ON includes diode reverse recovery.
Eon
= 133V
7-2004
D J
= 65A
Eoff
200
T = 125C L = 100H EON includes diode reverse recovery.
050-7007 Rev C
60 70 80 90 100 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
40
50
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90% 10% Gate Voltage TJ125C
APT20M36BLL_SLL
Gate Voltage
td(on) tr
Drain Current 5% 10% Switching Energy 90% 5% Drain Voltage
td(off)
90%
TJ125C
tf
10% 0
Drain Voltage
Drain Current Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT60DS30
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7007 Rev C
7-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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